simple drive requirement bv dss 600v small package outline r ds(on) 300 surface mount device i d 27ma halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm ma p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 250 /w thermal data parameter operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 10v 21 pulsed drain current 1 100 storage temperature range total power dissipation 0.5 -55 to 150 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 27 parameter rating drain-source voltage 600 AP2332GN-HF d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. g d s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =16ma - - 300 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =16ma - 28 - ms i dss drain-source leakage current v ds =480v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =0.1a 1.8 2.5 3.2 nc q gs gate-source charge v ds =200v - 1.3 - nc q gd gate-drain ("miller") charge v gs =10v - 0.8 - nc t d(on) turn-on delay time 2 v ds =300v - 11.5 - ns t r rise time i d =10ma - 14.5 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 14 - ns t f fall time r d =30k - 120 - ns c iss input capacitance v gs =0v 8.8 12.5 16.2 pf c oss output capacitance v ds =25v 7 10 13 pf c rss reverse transfer capacitance f=1.0mhz 5 7 9 pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.05a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.mounted on min. copper pad. AP2332GN-HF product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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